TY - GEN
T1 - A Bipolar Smart Power Synchronous Rectifier
AU - Szczerba, Piotr
AU - Walsh, Philip
AU - Grzesik, Boguslaw
AU - Worek, Cezary
N1 - Funding Information:
This work was supported by Enterprise Ireland under Technological Sector Research: Strand I Grant
Publisher Copyright:
© 2021 IEEE.
PY - 2021/4/25
Y1 - 2021/4/25
N2 - As microelectronic systems voltages continue to drop towards 1V and below, the design and realisation of low cost high efficiency DC-to-DC power converters become increasingly problematic due to the small but finite forward voltage drop typically 0.4-0.5 V and consequent power loss incurred across the switching device typically a Schottky diode contained within the low-voltage output stage of the converter circuitry. Traditionally, in medium to low-voltage applications, replacement of the Schottky diode with a MOSFET based synchronous rectifier SR has proved an effective solution to the aforementioned problem. However, use of a synchronous rectifier requires additional control circuitry, which gives rise to an increase in both circuit complexity and cost. In this paper a novel bipolar based synchronous rectifier BiSync device design that overcomes many of the aforementioned difficulties is proposed. Fundamental modes of operation were verified using Silvaco TCAD simulations to demonstrate proof of concept. Results presented indicate that the final design can provide a substantially more compact and electrically efficient solution than a MOSFET based synchronous rectifier of equivalent area, while also being capable of manufacture using an industry standard bipolar transistor technology and suitable for use in medium-to-very-low voltage conversion applications.
AB - As microelectronic systems voltages continue to drop towards 1V and below, the design and realisation of low cost high efficiency DC-to-DC power converters become increasingly problematic due to the small but finite forward voltage drop typically 0.4-0.5 V and consequent power loss incurred across the switching device typically a Schottky diode contained within the low-voltage output stage of the converter circuitry. Traditionally, in medium to low-voltage applications, replacement of the Schottky diode with a MOSFET based synchronous rectifier SR has proved an effective solution to the aforementioned problem. However, use of a synchronous rectifier requires additional control circuitry, which gives rise to an increase in both circuit complexity and cost. In this paper a novel bipolar based synchronous rectifier BiSync device design that overcomes many of the aforementioned difficulties is proposed. Fundamental modes of operation were verified using Silvaco TCAD simulations to demonstrate proof of concept. Results presented indicate that the final design can provide a substantially more compact and electrically efficient solution than a MOSFET based synchronous rectifier of equivalent area, while also being capable of manufacture using an industry standard bipolar transistor technology and suitable for use in medium-to-very-low voltage conversion applications.
KW - DC-DC converter
KW - power bipolar transistor
KW - power integrated circuits
KW - synchronous rectification
UR - http://www.scopus.com/inward/record.url?scp=85107509073&partnerID=8YFLogxK
U2 - 10.1109/PEMC48073.2021.9432495
DO - 10.1109/PEMC48073.2021.9432495
M3 - Conference contribution
AN - SCOPUS:85107509073
T3 - Proceedings - 2021 IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021
SP - 9
EP - 14
BT - Proceedings - 2021 IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th IEEE International Power Electronics and Motion Control Conference, PEMC 2021
Y2 - 25 April 2021 through 29 April 2021
ER -