Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques

J. Houlihan, J. R. O'Callaghan, V. Voignier, G. Huyet, J. G. McInerney, B. Corbettn

Research output: Contribution to journalConference articlepeer-review


We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 μm FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.

Original languageEnglish
Pages (from-to)250-255
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2002
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers - San Jose, CA, United States
Duration: 21 Jan 200223 Jan 2002


  • Gain control
  • Laser beam focusing
  • Semiconductor lasers


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