Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques

J. Houlihan; J. R. O'Callaghan; V. Voignier; G. Huyet; J. G. McInerney; B. Corbettn

doi:10.1117/12.467953

Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques

J. Houlihan, J. R. O'Callaghan, V. Voignier, G. Huyet, J. G. McInerney, B. Corbettn

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 μm FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.

Original language	English
Pages (from-to)	250-255
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4651
DOIs	https://doi.org/10.1117/12.467953
Publication status	Published - 2002
Externally published	Yes
Event	Novel In-Plane Semiconductor Lasers - San Jose, CA, United States Duration: 21 Jan 2002 → 23 Jan 2002

Keywords

Gain control
Laser beam focusing
Semiconductor lasers

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10.1117/12.467953

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title = "Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques",

abstract = "We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 μm FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.",

keywords = "Gain control, Laser beam focusing, Semiconductor lasers",

author = "J. Houlihan and O'Callaghan, {J. R.} and V. Voignier and G. Huyet and McInerney, {J. G.} and B. Corbettn",

year = "2002",

doi = "10.1117/12.467953",

language = "English",

volume = "4651",

pages = "250--255",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Novel In-Plane Semiconductor Lasers ; Conference date: 21-01-2002 Through 23-01-2002",

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TY - JOUR

T1 - Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques

AU - Houlihan, J.

AU - O'Callaghan, J. R.

AU - Voignier, V.

AU - Huyet, G.

AU - McInerney, J. G.

AU - Corbettn, B.

PY - 2002

Y1 - 2002

N2 - We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 μm FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.

AB - We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 μm FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.

KW - Gain control

KW - Laser beam focusing

KW - Semiconductor lasers

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DO - 10.1117/12.467953

M3 - Conference article

AN - SCOPUS:0036057104

SN - 0277-786X

VL - 4651

SP - 250

EP - 255

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Novel In-Plane Semiconductor Lasers

Y2 - 21 January 2002 through 23 January 2002

ER -

Achieving spatial coherence in broad area lasers using transverse gain tailoring techniques

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Keywords

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