Beam properties of injection profiled quantum dot lasers

Vinod Vukkalam; John Houlihan

doi:10.1016/j.optcom.2010.02.036

Beam properties of injection profiled quantum dot lasers

Research output: Contribution to journal › Article › peer-review

Abstract

The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor lasers is investigated. Numerical simulations based on a spatial extension of a simple rate equation model for quantum dot devices reveal the role of non-resonant carries in the appearance of strong dips in the optical field of the device. Symmetry breaking may also occur whereby the position of the dip shifts from the centre of the injection region.

Original language	English
Pages (from-to)	2596-2602
Number of pages	7
Journal	Optics Communications
Volume	283
Issue number	12
DOIs	https://doi.org/10.1016/j.optcom.2010.02.036
Publication status	Published - 15 Jun 2010

Keywords

LINEWIDTH ENHANCEMENT FACTOR SEMICONDUCTOR-LASERS FIELD PATTERN FILAMENTATION

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10.1016/j.optcom.2010.02.036

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Beam properties of injection profiled quantum dot lasers

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Keywords

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