Abstract
In this work, a novel Breakover Diode (BOD) design has been proposed and developed allowing the generation of a range of triggering voltages (20 - 300 V) independent of the starting material's resistivity, through modification of a single process step. Moreover, absolute control over the triggering (forward blocking) voltage (VBF) has been improved to approximately ±1.5%. In addition, the dependence of other critical device parameters, such as the breakover voltage (VBO), breakover current (I h) and holding current (Ih) on the forward blocking voltage has been virtually eliminated.
Original language | English |
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Pages (from-to) | 25-28 |
Number of pages | 4 |
Journal | IEE Colloquium (Digest) |
Issue number | 104 |
Publication status | Published - 29 Jun 1999 |