Family of novel surge protection devices with improved parameter control

P. R. Walsh; A. F.J. Murray; W. A. Lane

Family of novel surge protection devices with improved parameter control

P. R. Walsh, A. F.J. Murray, W. A. Lane

Department of Engineering Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

A novel Breakover Diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a Surface Breakdown Trigger Mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material's resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (V_BF) has also been achieved. The switching point's dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (I_BO) is available. Prototype devices exhibit narrow breakover voltage (V_BO) windows and significantly reduced leakage current (I_L) ratings. Experimental results are in good agreement with simulated trends.

Original language	English
Pages	301-304
Number of pages	4
Publication status	Published - 1998
Event	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn Duration: 03 Jun 1998 → 06 Jun 1998

Conference

Conference	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
City	Kyoto, Jpn
Period	03/06/1998 → 06/06/1998

Cite this

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title = "Family of novel surge protection devices with improved parameter control",

abstract = "A novel Breakover Diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a Surface Breakdown Trigger Mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material's resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (VBF) has also been achieved. The switching point's dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (IBO) is available. Prototype devices exhibit narrow breakover voltage (VBO) windows and significantly reduced leakage current (IL) ratings. Experimental results are in good agreement with simulated trends.",

author = "Walsh, {P. R.} and Murray, {A. F.J.} and Lane, {W. A.}",

year = "1998",

language = "English",

pages = "301--304",

note = "Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices &amp; ICs, ISPSD'98 ; Conference date: 03-06-1998 Through 06-06-1998",

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T1 - Family of novel surge protection devices with improved parameter control

AU - Walsh, P. R.

AU - Murray, A. F.J.

AU - Lane, W. A.

PY - 1998

Y1 - 1998

N2 - A novel Breakover Diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a Surface Breakdown Trigger Mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material's resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (VBF) has also been achieved. The switching point's dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (IBO) is available. Prototype devices exhibit narrow breakover voltage (VBO) windows and significantly reduced leakage current (IL) ratings. Experimental results are in good agreement with simulated trends.

AB - A novel Breakover Diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a Surface Breakdown Trigger Mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material's resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (VBF) has also been achieved. The switching point's dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (IBO) is available. Prototype devices exhibit narrow breakover voltage (VBO) windows and significantly reduced leakage current (IL) ratings. Experimental results are in good agreement with simulated trends.

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M3 - Paper

AN - SCOPUS:0031637766

SP - 301

EP - 304

T2 - Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices &amp; ICs, ISPSD'98

Y2 - 3 June 1998 through 6 June 1998

ER -

Family of novel surge protection devices with improved parameter control

Abstract

Conference

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