TY - GEN
T1 - Gain and phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
AU - Piwonski, T.
AU - O'Driscoll, I.
AU - Houlihan, J.
AU - Huyet, G.
AU - Manning, R. J.
AU - Corbett, B.
PY - 2008
Y1 - 2008
N2 - Ultrafast spectroscopy of quantum dot semiconductor optical amplifiers (SOAs) provides valuable information about the potential of these devices for emerging applications such as multi-wavelength regeneration while giving insight on their unique carrier dynamics. Pump-probe spectroscopy was used to analyse the carrier dynamics in InAs/GaAs quantum dot amplifiers. We have developed a "two-colour" experimental configuration that allows us to pump and probe different parts of the Amplified Spontaneous Emission spectrum and develop a detailed picture of the relevant carrier processes in both absorption and gain regimes of QD-SOAs. The study has revealed that hole recovery and intradot electron relaxation occur on a picosecond timescale, while the electron capture time is on the order of 10 ps. The relaxation of the wetting layer carrier density was shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. Such behaviour is strongly encouraging for reduced pattern effect operation in high speed optical networks.
AB - Ultrafast spectroscopy of quantum dot semiconductor optical amplifiers (SOAs) provides valuable information about the potential of these devices for emerging applications such as multi-wavelength regeneration while giving insight on their unique carrier dynamics. Pump-probe spectroscopy was used to analyse the carrier dynamics in InAs/GaAs quantum dot amplifiers. We have developed a "two-colour" experimental configuration that allows us to pump and probe different parts of the Amplified Spontaneous Emission spectrum and develop a detailed picture of the relevant carrier processes in both absorption and gain regimes of QD-SOAs. The study has revealed that hole recovery and intradot electron relaxation occur on a picosecond timescale, while the electron capture time is on the order of 10 ps. The relaxation of the wetting layer carrier density was shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. Such behaviour is strongly encouraging for reduced pattern effect operation in high speed optical networks.
KW - Gain and phase dynamics
KW - Pump-probe spectroscopy
KW - Quantum dot
KW - Semiconductor optical amplifier
UR - http://www.scopus.com/inward/record.url?scp=52149093216&partnerID=8YFLogxK
U2 - 10.1109/ICTON.2008.4598616
DO - 10.1109/ICTON.2008.4598616
M3 - Conference contribution
AN - SCOPUS:52149093216
SN - 9781424426256
T3 - Proceedings of 2008 10th Anniversary International Conference on Transparent Optical Networks, ICTON
SP - 145
EP - 148
BT - Proceedings of 2008 10th Anniversary International Conference on Transparent Optical Networks, ICTON
T2 - 2008 10th Anniversary International Conference on Transparent Optical Networks, ICTON
Y2 - 22 June 2008 through 26 June 2008
ER -