Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

Katarzyna Komolibus, Tomasz Piwonski, Siddharth Joshi, Nicolas Chimot, John Houlihan, Francois Lelarge, Guillaume Huyet

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the "dynamical" linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

Original languageEnglish
Article number031102
JournalApplied Physics Letters
Volume109
Issue number3
DOIs
Publication statusPublished - 18 Jul 2016

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