Influence of p-doping on the gain and refractive index dynamics in quantum dash based semiconductor optical amplifiers

Katarzyna Komolibus, Tomasz Piwonski, Siddharth Joshi, Nicolas Chimot, John Houlihan, Francois Lelarge, Guillaume Huyet

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents an investigation of room temperature ultra-fast carrier dynamics in a p-doped dash-in-A-well structure emitting at 1.5 μm using single colour heterodyne pump-probe spectroscopy. This technique enabled simultaneous access to the gain and refractive index dynamics in various operational conditions including both the absorption and gain regime. Comprehensive analysis of the timescales related to carrier relaxation and escape processes in addition to the 'dynamical' linewidth enhancement factor are presented and compared with results obtained from similar un-doped materials. The direct influence of the p-doping on the carrier dynamics is also discussed.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXIV
EditorsYasuhiko Arakawa, Bernd Witzigmann, Marek Osinski
PublisherSPIE
ISBN (Electronic)9781628419771
DOIs
Publication statusPublished - 2016
EventPhysics and Simulation of Optoelectronic Devices XXIV - San Francisco, United States
Duration: 15 Feb 201618 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9742
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXIV
Country/TerritoryUnited States
CitySan Francisco
Period15/02/201618/02/2016

Keywords

  • Carrier dynamics
  • P-doping
  • Quantum dashes
  • Semiconductor optical amplifiers

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