TY - JOUR
T1 - Microstructural analysis of varistors prepared from nanosize ZnO
AU - Pillai, S.C.
AU - Kelly, J.M.
AU - McCormack, D.E.
AU - Ramesh, R.
PY - 2004
Y1 - 2004
N2 - ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and oxalic acid
dihydrate at 500uC. The course of reaction at various temperatures was followed by XRD. Subsequently varistors
were fabricated from this nano-ZnO material by solid state mixing with various oxide additives and sintering to
1050uC. The microstructure of the sintered material was studied using XRD, field emission SEM (FESEM), and
EDX, and ZnO grains, bismuth rich regions and spinel phases were identified. Discs made from oxide doped nano-
ZnO show considerably higher breakdown voltage (656¡30 V mm21) compared to those prepared from
micrometre sized ZnO (410¡30 V mm21) and commercial varistors (454¡30 V mm21). However, varistors made
from the nano-ZnO show very low densification and high leakage current, making them unsuitable for device
fabrication.
AB - ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and oxalic acid
dihydrate at 500uC. The course of reaction at various temperatures was followed by XRD. Subsequently varistors
were fabricated from this nano-ZnO material by solid state mixing with various oxide additives and sintering to
1050uC. The microstructure of the sintered material was studied using XRD, field emission SEM (FESEM), and
EDX, and ZnO grains, bismuth rich regions and spinel phases were identified. Discs made from oxide doped nano-
ZnO show considerably higher breakdown voltage (656¡30 V mm21) compared to those prepared from
micrometre sized ZnO (410¡30 V mm21) and commercial varistors (454¡30 V mm21). However, varistors made
from the nano-ZnO show very low densification and high leakage current, making them unsuitable for device
fabrication.
U2 - 10.1179/026708304225019821
DO - 10.1179/026708304225019821
M3 - Article
SN - 0267-0836
VL - 20
SP - 964
EP - 968
JO - Materials Science and Technology
JF - Materials Science and Technology
IS - 8
ER -